Insights into the kinetics of a graphene edge epitaxial growth on copper from a one-dimensional PDE model

Model for computing kinetics of the graphene edge epitaxial growth on copper.

A basic kinetic model that incorporates a coupled dynamics of the carbon atoms and dimers on a copper surface is used to compute growth of a single-layer graphene island. The speed of the island's edge advancement on Cu[111] and Cu[100] surfaces is computed as a function of the growth temperature and pressure. Spatially resolved concentration profiles of the atoms and dimers are determined, and...

Absorption Spectra of a Graphene Embedded One Dimensional Fibonacci Aperiodic Structure

In this paper, we explore the linear response of one dimensionalquasiperiodic structure based on Fibonacci sequence composed of silicon dioxide,polystyrene and graphene materials. Here, a graphene monolayer is sandwichedbetween two adjacent layers. The numerical results are obtained by using the standardtransfer matrix method. Due to the presence of graphene sheet in eac...

Synthesis and Characterization of Graphene Oxide Nano-Sheets for Effective Removal of Copper Phthalocyanine from Aqueous Media

Graphene Oxide (GO) nano sheets was synthesized from graphite by Hummers method. The nature and morphology of the GO were characterized using FT-IR, UV-Vis, SEM and XRD analysis. Batch sorption experiments were carried out to remove copper (ii) phthalocyanine-tetrasulfonic acid tetrasodium salt [Cu(tsPc)-4.4Na+] from its aqueous solutions using GO as an adsorbent. Experime...

Analysis of Island Dynamics in Epitaxial Growth of Thin Films

This work is concerned with analysis and refinement for a class of island dynamics models for epitaxial growth of crystalline thin films. An island dynamics model consists of evolution equations for step edges (or island boundaries), coupled to a diffusion equation for the adatom density, on an epitaxial surface. The island dynamics model with irreversible aggregation is confirmed to be mathema...

Insights into few-layer epitaxial graphene growth on 4H-SiC(000(1)over-bar substrates from STM studies